Integration of LaMnO_3+δ films on platinized silicon substrates for resistive switching applications by PI-MOCVD

• Raquel Rodriguez-Lamas,
• Dolors Pla,
• Odette Chaix-Pluchery,
• Benjamin Meunier,
• Fabrice Wilhelm,
• Andrei Rogalev,
• Laetitia Rapenne,
• Xavier Mescot,
• Quentin Rafhay,
• Hervé Roussel,
• Michel Boudard,
• Carmen Jiménez and
• Mónica Burriel

Beilstein J. Nanotechnol. 2019, 10, 389–398, doi:10.3762/bjnano.10.38

• -based devices fabricated using optimized growth strategies. Keywords: manganite; metal organic chemical vapour deposition (MOCVD); resistive switching; thin film; valence-change memory; Introduction Resistive switching (RS) denotes the phenomena occurring in capacitor-like heterostructures (metal

Copper atomic-scale transistors

• Fangqing Xie,
• Maryna N. Kavalenka,
• Moritz Röger,
• Daniel Albrecht,
• Hendrik Hölscher,
• Jürgen Leuthold and
• Thomas Schimmel

Beilstein J. Nanotechnol. 2017, 8, 530–538, doi:10.3762/bjnano.8.57

• the most promising alternative concepts. Resistive nanoelectronic devices are operated under one of the following switching mechanisms: electrostatic/electronic, electrochemical metallization, valence-change memory, thermochemical memory or phase change [1][2][3][4][5]. Resistive devices are a non

• devices can potentially be applied as logic operation devices that can fully utilize semiconductor circuit technology. Switching mechanisms such as valence-change memory effect, thermochemical memory effect, and electrochemical metallization effect have been previously exploited for three-terminal devices